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EIC0910-12
UPDATED 03/07/2008
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Excelics
EIC0910-12
.827.010 .669
.120 MIN .120 MIN
FEATURES
* * * * * * * 9.50-10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.125 .508.008 .442 .168.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105.008
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ 3200Ma Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3200mA f = 9.50-10.50GHz Drain Current at 1dB Compression f = 9.50-10.50GHz Output 3rd Order Intermodulation Distortion f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ 65% IDSS f = 10.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance3
2. S.C.L. = Single Carrier Level.
Caution! ESD sensitive device. MIN
39.5 6.0
TYP
40.5 7.0
MAX
UNITS
dBm dB
0.6 30 3300 -43 -46 6500 -2.5 2.3 9000 -4.0 2.6
o
dB %
4200
mA dBc mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA
Note: 1. Tested with 50 Ohm gate resistor.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 130mA -21mA 40.0dBm 175 C -65 to +175 C 57W
o o
CONTINUOUS2 10V -4V 43mA -7mA @ 3dB Compression 175 oC -65 to +175 oC 57W
Vds Vgs Igsf Igsr Pin Tch Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2 Revised March 2008
EIC0910-12
UPDATED 03/07/2008
9.50-10.50 GHz 12-Watt Internally Matched Power FET
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2 Revised March 2008

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